A VORTEX TRANSITIONAL MEMORY CELL FOR 1-MBIT CM(2) DENSITY JOSEPHSON RAMS/

We developed an 8.5 mu m x 11.5 mu m vortex transitional (VT) memory c ell, The memory cell is the smallest Josephson memory cell ever report ed, The cell was fabricated by electron cyclotron resonance plasma etc hing and bias-sputtering planarization, This is also the first Josephs on circuit fabricated with sub-micron minimum feature size. Proper non -destructive read-out operation was verified even after half-selected conditions. An operating margin of +/- 14% was obtained for control cu rrents I-X and I-Y. These results are promising far developing a 1-Mbi t/cm(2) density Josephson RAM.