A. Marx et al., LOW-FREQUENCY VOLTAGE NOISE IN HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 2719-2722
We have performed detailed measurements of 1/f voltage noise in a vari
ety of bicrystal grain boundary Josephson junctions and in ramp edge j
unctions with artificial barriers. Fluctuations of the junction critic
al current I-c and the normal state resistance R-n were found to fully
account for the measured 1/f noise. For the normalized fluctuations S
-I and S-R, which were found to be independent of temperature, a linea
r scaling with R-n has been observed. Correlation experiments proved t
hat the fluctuations of I-c and R-n are anti-phase correlated. The rat
io S-I/S-R of the normalized fluctuations is in close agreement with t
he scaling of the IcRn-product indicating a common underlying physical
mechanism. Our analysis strongly supports the Intrinsically Shunted J
unction (ISJ) model based on an insulating grain boundary containing a
high density of localized defect states with fluctuating electron occ
upation causing 1/f noise. The effective charge trapping time within s
ingle traps shows thermally activated behavior and was found to decay
exponentially with increasing bias voltage.