LOW-FREQUENCY VOLTAGE NOISE IN HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS

Citation
A. Marx et al., LOW-FREQUENCY VOLTAGE NOISE IN HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 2719-2722
Citations number
25
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10518223
Volume
7
Issue
2
Year of publication
1997
Part
3
Pages
2719 - 2722
Database
ISI
SICI code
1051-8223(1997)7:2<2719:LVNIHS>2.0.ZU;2-M
Abstract
We have performed detailed measurements of 1/f voltage noise in a vari ety of bicrystal grain boundary Josephson junctions and in ramp edge j unctions with artificial barriers. Fluctuations of the junction critic al current I-c and the normal state resistance R-n were found to fully account for the measured 1/f noise. For the normalized fluctuations S -I and S-R, which were found to be independent of temperature, a linea r scaling with R-n has been observed. Correlation experiments proved t hat the fluctuations of I-c and R-n are anti-phase correlated. The rat io S-I/S-R of the normalized fluctuations is in close agreement with t he scaling of the IcRn-product indicating a common underlying physical mechanism. Our analysis strongly supports the Intrinsically Shunted J unction (ISJ) model based on an insulating grain boundary containing a high density of localized defect states with fluctuating electron occ upation causing 1/f noise. The effective charge trapping time within s ingle traps shows thermally activated behavior and was found to decay exponentially with increasing bias voltage.