EFFECT OF INTENSE PROTON IRRADIATION ON PROPERTIES OF JOSEPHSON DEVICES

We have experimentally investigated the effects of intense proton beam irradiation (up to 10(15) p/cm(2)) on Josephson junctions and junctio n arrays. The devices we have studied were realized using state of the art full-Nb technology, employing same materials and thicknesses of c ommon Josephson digital circuit designs. We have analysed in detail th e magnetic field dependence of the junction critical current, and the quasiparticle tunneling current, in order to possible observe occurren ce of permanent changes produced by the ionizing particles. No evidenc e of radiation induced damage on the properties of the junctions has b een found.