Temperature dependent Mossbauer study at Sn sites in some IV-VI semiconductors containing off-center atoms

Authors
Bland, J Thomas, MF Tkachenka, TM
Citation
J. Bland et al., Temperature dependent Mossbauer study at Sn sites in some IV-VI semiconductors containing off-center atoms, PHYS ST S-B, 221(2), 2000, pp. 617-624
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
221
Issue
2
Year of publication
2000
Pages
617 - 624
Database
ISI
SICI code
0370-1972(200010)221:2<617:TDMSAS>2.0.ZU;2-V
Abstract
(PbTe)(1-x)(SnSe)(x) and Ge1-xSnaTe semiconducting systems have been invest igated by the Mossbauer effect method in the temperature region 5-240 K. Th e purpose was to study the Sn, Pb and Ge atoms uncentered displacements wit h the temperature change. It was shown that the quadrupole splitting of Sn- 119 Mossbauer spectra during the cooling-heating cycle has a hysteretic for m.