Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versussingle dot studies

Citation
J. Seufert et al., Be-induced island formation in CdSe/ZnSe heterostructures: Ensemble versussingle dot studies, PHYS REV B, 62(19), 2000, pp. 12609-12612
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
19
Year of publication
2000
Pages
12609 - 12612
Database
ISI
SICI code
0163-1829(20001115)62:19<12609:BIFICH>2.0.ZU;2-O
Abstract
We present photoluminescence (PL) studies on quantum islands formed below t he critical thickness for Stranski-Krastanow growth by a well-defined incor poration of Be nucleation centers in CdSe/ZnSe heterostructures. The occurr ence of spectrally narrow, individual photoluminescence peaks in spatially resolved PL spectra and a significant enhancement of the recombination life time clearly indicate the presence of zero-dimensional stales. A direct com parison of temperature-dependent single dot measurements with optical studi es on quantum dot (QD) ensembles demonstrates an efficient coupling between individual QD's at elevated temperatures.