Band-gap shift of the heavily doped single- and double-donor systems Si : Bi and Si : P,Bi

The band-gap shift of the heavily single and double-donor doped systems Si: Bi and Si:P,Bi, prepared by ion implantation, was investigated theoreticall y and experimentally at room temperature. The calculations were carried out within a framework of the random-phase approximation and the temperature a nd different many-body effects were taken into account. The experimental da ta were obtained with photoconductivity measurements. Theoretical and exper imental results fall closely together in a wide range of donor concentratio n.