Tungsten in silicon carbide: Band-gap states and their polytype dependence

Band-gap states of tungsten in silicon carbide (polytypes 4H, 6H, and 15R) are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on ii-type SiC. Doping with W is done by ion implantation and annealing. To establish a definite chemical identification of band-gap sta tes, the radioactive isotope W-178 is used as a tracer: band-gap states inv olving a W-178 isotope are uniquely identified by their decreasing concentr ation during the nuclear transmutation of W-178 t, Hf. In addition, convent ional doping studies with stable W isotopes are performed. Within thr: part of the band gap accessible by DLTS on,l-type SIG, there is one tungsten-re lated deep level with a large capture cross section (10(-12) cm(2)) for ele ctrons. In the polytypes 4H, 6H, and 15R, its energy is 1.43, 1.16, and 1.1 4 eV below the conduction-band edge (E-C) respectively. The polytype depend ence of this level position directly reflects the conduction-band offset, i n the 4H polytype, an additional level close to the conduction band (E-C - 0.17 eV) exists that is absent in the other polytypes because of their smal ler band gap. Due to the acceptorlike deep band-gap state, tungsten is a go od candidate for a compensating center to produce semi-insulating SiC.