Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots

We adopt an atomistic pseudopotential description of the electronic structu re of self-assembled, lens-shaped InAs quantum dots within the "linear comb ination of bulk bands" method. We present a detailed comparison with experi ment, including quantites such as the single-particle electron and hole ene rgy level spacings, the excitonic band gap, the electron-electron, hole-hol e, and electron-hole Coulomb energies and the optical polarization anisotro py. We find a generally good agreement, which is improved even further for a dot composition where some Ga has diffused into the dots.