Many-particle density-matrix approach to a quantum dot system for the strong electron accumulation case

We consider the system of an electronic quantum dot with a base set of disc rete single-particle levels due to quantization effects in an arbitrarily g iven attractive potential. Intradot electron-electron interaction is descri bed employing the full many-particle Coulomb interaction Hamiltonian in sec ond quantization. Interaction effects arising from a capacitive response of the environment is incorporated within the framework of a classical intera ction term. Hereby the environment consists of thermodynamical electron res ervoirs coupled to the quantum dot system via weak tunnel barriers. Using t his quantum dot model Hamiltonian we present a many-particle density-matrix approach in order to describe the thermodynamical state of the many-electr on system and calculate expectation values of observables such as particle number and total spin. In the following we assume that exactly one reservoi r dominates concerning a very weak particle injection. The other reservoirs are thought of as negligible tunneling probes. Especially the system of a laterally confined sub-mum resonant tunneling diode in the single-electron tunneling regime for the case of strong barrier asymmetry will be discussed as an example. Numerical results for realistic diode parameters suggest th e definition of a capacitive and atomic regime of such an interacting quant um dot system.