Coherent and incoherent polaritonic gain in a planar semiconductor microcavity

Citation
G. Dasbach et al., Coherent and incoherent polaritonic gain in a planar semiconductor microcavity, PHYS REV B, 62(19), 2000, pp. 13076-13083
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
19
Year of publication
2000
Pages
13076 - 13083
Database
ISI
SICI code
0163-1829(20001115)62:19<13076:CAIPGI>2.0.ZU;2-1
Abstract
The gain processes in a semiconductor microcavity in the strong coupling re gime have been studied by pump-probe experiments in transmission geometry. It is demonstrated that the nonlinear signal consists of two contributions, a coherent and an incoherent one. In agreement with recent reports, the co herent gain is identified as a parametric amplification process that is dri ven by the probe field and stimulates the scattering of polaritons into the k(parallel to) = 0 states. We attribute the incoherent gain to scattering of randomly distributed polaritons in the predominantly excitonic part of t he lower polariton branch into states with zero wave number in the lower br anch. Both processes are characterized by their polarization dependence and their sensitivity to the spectral position of the pump laser beams. They a lso show a pronounced threshold behavior versus the pump power.