Electrical noise measurements at 10 Hz are reported for YBCO films at
the resistive edge. Results are given for films with widths of 0.1, 1,
and 5 mm that were deposited simultaneously on the same substrate, fo
r three different substrate materials. The NET improves by approximate
ly a factor of 10 as the thermometer area is increased by a factor of
2500, with fixed bias current. At temperatures giving maximum dR/dT an
d with nominally 19 mA bias currents, the 5 mm samples have very low n
oise equivalent temperatures of 3.1, 3.5, and 4.4 nK/root Hz for LaAlO
3, Al2O3, and Si substrates, respectively. These are the lowest values
reported up to the present time. Suprisingly, noise from the sample o
n si is consistent with pure Johnson noise even with bias current as l
arge as 5 mA (0.28 x 10(4) A/cm(2)). For YBCO thicknesses no greater t
han 50 nm excellent thermometers can be made on any of these substrate
s in spite of the mechanical strains produced in the films by the subs
trate.