SINGLE-ELECTRON TRANSISTORS BASED ON AL ALOX/AL AND NB/ALOX/NB TUNNEL-JUNCTIONS/

Authors
BLUTHNER K GOTZ M HADICKE A KRECH W WAGNER T MUHLIG H FUCHS HJ HUBNER U SCHELLE D KLEY EB FRITZSCH L
Citation
K. Bluthner et al., SINGLE-ELECTRON TRANSISTORS BASED ON AL ALOX/AL AND NB/ALOX/NB TUNNEL-JUNCTIONS/, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3099-3102
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on applied superconductivity → ACNP
ISSN journal
10518223
Volume
7
Issue
2
Year of publication
1997
Part
3
Pages
3099 - 3102
Database
ISI
SICI code
1051-8223(1997)7:2<3099:STBOAA>2.0.ZU;2-J
Abstract
As an alternative to the shadow evaporation method for the preparation of ultrasmall tunnel junctions we have established the so-called self -aligned in-line technique. It was applied to the fabrication of commo n Al/AlOx/Al-type and, for the first time, Nb/AlOx/Nb-based single-ele ctron transistors. The characterization of the samples at temperatures in the range of a few hundred millikelvins reveals charging effects ( Coulomb blockade and gate modulation) of the quasiparticle current.