Electrical discharge properties in dielectric-loaded diodes

Authors
Citation
Hs. Uhm, Electrical discharge properties in dielectric-loaded diodes, PHYS PLASMA, 7(11), 2000, pp. 4770-4773
Citations number
14
Categorie Soggetti
Physics
Journal title
PHYSICS OF PLASMAS
ISSN journal
1070664X → ACNP
Volume
7
Issue
11
Year of publication
2000
Pages
4770 - 4773
Database
ISI
SICI code
1070-664X(200011)7:11<4770:EDPIDD>2.0.ZU;2-2
Abstract
Properties of the electrical discharge in a dielectric-loaded diode are inv estigated. An analytical expression of the saturated voltage phi (s) in the gap between the dielectric materials is obtained in terms of parameter xi related to the rise time of the applied voltage. It is shown that the satur ated gap voltage approaches unity very closely, initiating an electrical br eakdown, when parameter xi increases to a large value (typically 1000). Thi s corresponds to the usual high-pressure discharge. On the other hand, if a bundant triggering electrons are provided by radiation or by any other mean s, the saturated gap voltage is considerably less than unity and therefore electrical breakdown in the gap never occurs. (C) 2000 American Institute o f Physics. [S1070- 664X(00)01111-3].