Synthesis of novel fluorine-containing poly(aryl ether ketone)s

Citation
K. Kimura et al., Synthesis of novel fluorine-containing poly(aryl ether ketone)s, POLYM ADV T, 11(8-12), 2000, pp. 757-765
Citations number
9
Categorie Soggetti
Organic Chemistry/Polymer Science
Journal title
POLYMERS FOR ADVANCED TECHNOLOGIES
ISSN journal
10427147 → ACNP
Volume
11
Issue
8-12
Year of publication
2000
Pages
757 - 765
Database
ISI
SICI code
1042-7147(200008/12)11:8-12<757:SONFPE>2.0.ZU;2-K
Abstract
The high-performance fluorinated polymers have been receiving considerable attention as interesting advanced materials. The incorporation of fluorine atoms into polymer chains leads to polymers with increased solubility, flam e resistance, thermal stability and glass transition temperature while also leading to decreased color crystallinity, dielectric constant and moisture absorption. 2,3,4,5,6-Pentafluorobenzoic acid (PFBA) is a valuable interme diate for pharmaceuticals, pesticides, perfumes, cosmetics and so on, and i t is available as a commercial product. However, the polymers derived from PFBA have not been reported so far. In this paper, we report the synthesis and characterization of novel fluorinated poly(aryl ether ketone)s (PEKs) c ontaining 2,3,5,6-tetrafluoro-1,4-phenylene moieties derived from PFBA. Nov el fluorinated PEKs are prepared from PFBA by aromatic nucleophilic substit ution reaction, of which M-n values range from 2.28 x 10(4) to 1.04 x 10(5) . They have all para connected linear structures. The aromatic fluorine of the para position to the carbonyl groups of monomers is preferentially subs tituted by phenoxide and this para orientation is mainly attributed to the steric effect rather than pi -electron density. The obtained PEKs except 8F -PEKEK (BP) show excellent solubilities in common solvents and can be cast into tough transparent films. They also exhibit high glass transition tempe ratures depending on the structures and outstanding thermal stabilities. Fu rthermore, these fluorine-containing PEKs exhibit low dielectric constants from 2.87 to 3.52 at I MHz. Copyright (C) 2000 John Wiley & Sons, Ltd.