MODELING AND ANALYSIS OF CAPACITANCES IN METALLIC SINGLE-ELECTRON TUNNELING STRUCTURES

The calculation of the capacitances between well-separated thin coplan ar electrodes is of fundamental importance in single charge electronic s, e.g. for optimizing the geometry of digital circuits with respect t o desired coupling as well as to parasitic cross-talk capacitances. We are able to extract such capacitances from three-dimensional numerica l field computations basing on the boundary element method. Our progra m yields relevant information about the dependence of the capacitance on geometry as verified by comparing calculated gate coupling capacita nces of different types of single electron transistors with values obt ained from the experiment.