Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model

Authors
Eliseev, PG Li, H Liu, GT Stintz, A Newell, TC Lester, LE Malloy, KJ
Citation
Pg. Eliseev et al., Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model, QUANTUM EL, 30(8), 2000, pp. 664-668
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
QUANTUM ELECTRONICS
ISSN journal
10637818 → ACNP
Volume
30
Issue
8
Year of publication
2000
Pages
664 - 668
Database
ISI
SICI code
1063-7818(200008)30:8<664:OGIIQS>2.0.ZU;2-H
Abstract
The dependence of the mode optical gain on current in InAs/InGaAs quantum-d ot structures grown by the method of molecular-beam epitaxy is obtained fro m the experimental study of ultra-low-threshold laser diodes. The record lo west inversion threshold at room temperature was about 13 A cm(-2). A theor etical model is proposed that relates the optical gain to the ground-state transitions in quantum dots. The effective gain cross section is estimated to be similar to 7 x 10(-15) cm(-2).