Large photoresponse of CdO/porous Si diodes

Authors
Dhar, S Chakrabarti, S
Citation
S. Dhar et S. Chakrabarti, Large photoresponse of CdO/porous Si diodes, SEMIC SCI T, 15(11), 2000, pp. L39-L40
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
15
Issue
11
Year of publication
2000
Pages
L39 - L40
Database
ISI
SICI code
0268-1242(200011)15:11<L39:LPOCSD>2.0.ZU;2-O
Abstract
High-performance rectifying contacts with a rectifying ratio exceeding 1000 are obtained by depositing thin transparent and conducting CdO films on po rous silicon (PSi) and annealing at an optimized temperature. The reverse c urrent of 1.5 mm diameter diodes at -10 V in the dark is 26 nA; this increa ses by three orders of magnitude under exposure to normal tungsten lamp ill umination. The results show that CdO-on-PSi diodes will act as very good ca ndidates for making high-efficiency photodiodes.