Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy

The spin-flip Raman scattering by the epitaxial layers of quaternary alumin ium gallium indium phosphide alloys lattice matched to gallium arsenide has been investigated in order to gain insight into the band structure paramet ers of this material system. Both electron and hole spin-flip Raman signals were observed and were identified by their behaviour on the application of a biaxial strain to the epilayer. The gyromagnetic ratios of the electron and hole were determined and it was found that a three-band k . p model giv es a good description of the experimental values of the conduction band gyr omagnetic ratio as a function of composition; these data provide a new insi ght into the dependence of the spin-orbit splitting on composition.