The SiC(0001) root 3 x root 3 surface state

Authors
Glans, PA Johansson, LI
Citation
Pa. Glans et Li. Johansson, The SiC(0001) root 3 x root 3 surface state, SURF SCI, 465(1-2), 2000, pp. L759-L763
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
465
Issue
1-2
Year of publication
2000
Pages
L759 - L763
Database
ISI
SICI code
0039-6028(20001010)465:1-2<L759:TSR3XR>2.0.ZU;2-4
Abstract
An angle resolved photoemission study of the surface state on the 6H-SiC(00 01) root3 x root3 surface is reported. The symmetry of the surface state is determined and effects induced after oxygen and sodium exposures are inves tigated. The periodicity of the surface dispersion is investigated in two d ifferent azimuthal directions. The expected root3 x root3 periodicity of a Mott-Hubbard ground state was not observed when going outside the first roo t3 x root3 Surface Brillouin Zone. (C) 2000 Elsevier Science B.V. All right s reserved.