Passivation of GaAs surface by GaS

The thermal evaporation of a GaS single crystal has been used to passivate the GaAs surface. The passivation effect of GaAs surface by GaS has been st udied by low-energy electron-loss spectroscopy (LEELS) and photoluminescenc e (PL). The LEELS spectra shows that the surface related peaks of GaAs disa ppeared immediately after starting the deposition, suggesting the effective passivation of dangling bonds of GaAs surface by S atoms included in the e vaporated species. PL measurements suggest that the GaAs surface is effecti vely passivated by GaS films. (C) 2000 Elsevier Science Ltd. All rights res erved.