Microscopic theory of optical dephasing in semiconductors

Citation
Sw. Koch et al., Microscopic theory of optical dephasing in semiconductors, APPL PHYS A, 71(5), 2000, pp. 511-517
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
71
Issue
5
Year of publication
2000
Pages
511 - 517
Database
ISI
SICI code
0947-8396(200011)71:5<511:MTOODI>2.0.ZU;2-9
Abstract
Dephasing, i.e. the decay of the optical interband polarization in a semico nductor results from destructive interference effects between different mic roscopic contributions. For a system without ally disorder it is shown that the many-body Coulomb correlations lead to excitation-induced dephasing wh ich becomes increasingly important at elevated excitation levels. The effec t of disorder-induced dephasing is analyzed for low excitation levels, wher e the combined influence of excitonic, biexcitonic, and disorder scattering contributions lead to a temporal decay of the four-wave-mixing signal.