Morphologies of GaN one-dimensional materials

GaN one-dimensional materials with different morphologies were formed on La AlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XR D), field-emission scanning electron microscopy (FE-SEM) and energy-dispers ive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires , nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN.