Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures

CdSe/ZnSe quantum structures were systematically investigated by high-resol ution x-ray diffraction. The samples were grown at different growth tempera tures on GaAs(001) substrates by molecular-beam epitaxy. A model is present ed enabling the simulation and quantitative analysis of x-ray diffraction p rofiles influenced by stacking faults. This yields a fast and nondestructiv e method for the determination of stacking fault densities after calibratio n by transmission electron microscopy. A steep increase of the stacking fau lt density above a critical thickness was found. The critical thickness dec reases with increasing growth temperature. Above this critical thickness, t he amount of incorporated CdSe remains apparently constant. (C) 2000 Americ an Institute of Physics. [S0003-6951(00)01648-X].