Ion-beam-induced dissociation and bubble formation in GaN

Citation
So. Kucheyev et al., Ion-beam-induced dissociation and bubble formation in GaN, APPL PHYS L, 77(22), 2000, pp. 3577-3579
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
22
Year of publication
2000
Pages
3577 - 3579
Database
ISI
SICI code
0003-6951(20001127)77:22<3577:IDABFI>2.0.ZU;2-V
Abstract
Structural studies reveal that heavy ion bombardment of GaN causes amorphiz ation and anomalous swelling of the implanted region as a result of the for mation of a porous structure. Results strongly suggest that such a porous s tructure consists of N-2 gas bubbles embedded into a highly N-deficient amo rphous GaN matrix. The evolution of the porous structure in amorphous GaN a ppears to be a result of stoichiometric imbalance where N- and Ga-rich regi ons are produced by ion bombardment. Prior to amorphization, ion bombardmen t does not produce a porous structure due to very efficient dynamic anneali ng processes in the crystalline phase. (C) 2000 American Institute of Physi cs. [S0003-6951(00)03349-0].