Detection of stacking faults in 6H-SiC by Raman scattering

Raman spectra of 6H-SiC crystals including stacking faults have been examin ed for the c face using backscattering geometry. The intensity of the trans verse optical phonon band at 796 cm(-1), which corresponds to the phonon mo de at the Gamma point in 3C-SiC, is sensitive to the stacking faults. We fo und that the intensity of this band depends on the stacking fault density. This is explained based on the bond polarizability model. The spatial distr ibution of the stacking faults is studied by Raman image measurement. (C) 2 000 American Institute of Physics. [S0003-6951(00)00249-7].