T. Dimopoulos et al., Enhancement of the thermal stability of magnetic tunnel junctions employing artificial ferrimagnets, APPL PHYS L, 77(22), 2000, pp. 3624-3626
We have fabricated magnetic tunnel junctions that use Co/Ru/Co and Co/Ru/Co
50Fe50 artificial ferrimagnet (AFi) systems as hard magnetic electrodes and
AlOx as tunnel barrier. The thermal behavior of the two AFis, incorporated
in tunnel junctions, presents dramatic differences, the most remarkable be
ing the much greater thermal stability of the Co/Ru/CoFe system. This stems
from the improvement of the interfaces the CoFe alloy forms with its adjac
ent Ru and AlOx layers. After successive annealing steps up to 400 degreesC
, junctions incorporating the Co/Ru/CoFe system still present a significant
tunnel magnetoresistance signal of nearly 20%, and most importantly, an al
most intact magnetic rigidity of the hard magnetic system, being very promi
sing for spin-electronic devices. (C) 2000 American Institute of Physics. [
S0003-6951(00)02048-9].