Photovoltaic properties of CuGaSe2 homodiodes

Citation
Jh. Schon et al., Photovoltaic properties of CuGaSe2 homodiodes, APPL PHYS L, 77(22), 2000, pp. 3657-3659
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
22
Year of publication
2000
Pages
3657 - 3659
Database
ISI
SICI code
0003-6951(20001127)77:22<3657:PPOCH>2.0.ZU;2-B
Abstract
CuGaSe2-homodiodes were prepared by diffusion of Sb into n-type material. T otal area solar energy conversion efficiencies up to 9.4% were obtained for standard solar illumination (air mass 1.5/AM1.5). Moreover, the analysis o f illuminated and dark current-voltage characteristics revealed reduced rec ombination losses compared to conventional ZnO/CdS/CuGaSe2 diodes, leading to filling factors exceeding 70%. Hence, the use of homodiodes is very prom ising for efficient solar energy conversion in wide-band-gap Cu-III-VI2 cha lcopyrites. (C) 2000 American Institute of Physics. [S0003-6951(00)03848-1] .