Elevated-temperature synthesis has been used to generate side-by-side biaxi
ally structured silicon carbide-silica nanowires. The axial growth directio
n approaches [311] for nanowires with a high density of microtwins and is [
211] for defect-free nanowires. The structure of these nanowires, their cro
ss-sectional shape, and their structural transformation between a biaxial a
nd coaxial configuration have been studied by transmission electron microsc
opy. The Young's modulus of the biaxially structured nanowires was measured
to be 50-70 GPa depending on the size of the nanowire. (C) 2000 American I
nstitute of Physics. [S0003-6951(00)02347-0].