Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading

Interfacial stability and the morphology of the epitaxial film surface have been studied in InAs/GaAs(111)A heteroepitaxy based on atomistic simulatio ns and scanning tunneling microscopy. Effects of buffer layer thickness wer e examined by analyzing two heteroepitaxial systems consisting of thin and thick GaAs buffer layers. In both cases, one monolayer of In0.50Ga0.50As is grown initially on the buffer layer prior to InAs growth. Our results indi cate that film compositional grading and the resulting segregation of In at oms at defects in the semicoherent interface can be used effectively in con junction with the mechanical compliance of thin buffer layers to delay the completion of the coherent-to-semicoherent interfacial transition. (C) 2000 American Institute of Physics. [S0003-6951(00)01747-2].