HIGHLY ORIENTED DIAMOND DEPOSITED USING A LOW-PRESSURE FLAT FLAME

A multi-step process for the achievement of highly oriented, (100) tex tured diamond films on silicon using flat flame deposition has been de veloped. First, a bias-enhanced technique was used to achieve oriented nuclei on a Si (100) substrate in a microwave plasma reactor. Substra tes were then transferred to the combustion system and rapidly grown i nto coalesced (100) films at a growth rate of 4-5 mu m/h. X-ray textur e analysis was used to characterize the films. It showed a 12 degrees misalignment of the crystallites with respect to the surface normal, w hile the azimuthal misalignment was measured to be 20 degrees.