ELECTRICAL-CONDUCTION OF BI4TI3O12-DOPED BATIO3 CERAMICS SINTERED AT LOW-TEMPERATURE

Citation
Jc. Mpeko et al., ELECTRICAL-CONDUCTION OF BI4TI3O12-DOPED BATIO3 CERAMICS SINTERED AT LOW-TEMPERATURE, Materials letters, 32(1), 1997, pp. 33-36
Citations number
11
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
32
Issue
1
Year of publication
1997
Pages
33 - 36
Database
ISI
SICI code
0167-577X(1997)32:1<33:EOBBCS>2.0.ZU;2-G
Abstract
BaTiO3 ceramics with a small amount of Bi4Ti3O12 were sintered at a lo w temperature of 1100 degrees C for 2 h. We report a high densificatio n of the system (BaTiO3 + xBi(4)Ti(3)O(12); 0.01 less than or equal to x less than or equal to 0.03) larger than 90% of BaTiO3 theoretical d ensity except for x = 0.01. We show the measured ac impendances of the samples at approximate to 500 degrees C using the complex plane plott ing technique. The results involving large differences between the mat erial resistance are discussed in terms of the final microstructure af ter the sample firing.