ULTRAFAST HOLE-PHONON INTERACTIONS IN GAAS

Ultrafast heating of cold holes is investigated in bulk GaAs using a h igh-sensitivity two-color absorption saturation technique. Measurement s performed as a function of the lattice temperature and of the carrie r excess energy show that absorption of optical phonons is the main ho le heating mechanism for the investigated temperatures in the range 10 0-300 K. Using a numerical model for carrier dynamics, the optical def ormation potential is estimated to be d(0) similar to 40 eV. (C) 1997 American Institute of Physics.