Vv. Gupta et al., NUMERICAL-ANALYSIS OF EXCIMER-LASER-INDUCED MELTING AND SOLIDIFICATION OF THIN SI FILMS, Applied physics letters, 71(1), 1997, pp. 99-101
We have developed an efficient two-dimensional numerical model, based
on the finite difference method and utilizing the alternate-direction
explicit scheme, that can simulate excimer laser melting and solidific
ation of thin Si films on SiO2. The model takes into account important
aspects of the process such as undercooling and the temperature-depen
dent velocity of the solidifying interface, supercooling of liquid Si,
and the inert nature of the underlying oxide interface. We demonstrat
e the unique capability of the model by simulating spatially confined
beam-induced localized complete melting of the irradiated portion of t
he film, and the ensuing lateral solidification, which initiates from
the unmelted regions of the film into the completely molten area. (C)
1997 American Institute of Physics.