Low-temperature fabrication of Si thin-film transistor microstructures by soft lithographic patterning on curved and planar substrates

Citation
Mk. Erhardt et al., Low-temperature fabrication of Si thin-film transistor microstructures by soft lithographic patterning on curved and planar substrates, CHEM MATER, 12(11), 2000, pp. 3306-3315
Citations number
52
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
12
Issue
11
Year of publication
2000
Pages
3306 - 3315
Database
ISI
SICI code
0897-4756(200011)12:11<3306:LFOSTT>2.0.ZU;2-G
Abstract
We demonstrate the use of micrometer-scale polymer molding, a soft-lithogra phic patterning technique, as a means to fabricate amorphous silicon thin-f ilm transistors (TFTs). Two different TFT architectures were fabricated and tested-a common gate, common channel architecture for single-level pattern ing on a spherically curved glass substrate-and an isolated channel, invert ed, staggered architecture with multilevel pattern registration on a planar glass substrate. The silicon and silicon nitride films are deposited by re active magnetron sputtering, allowing all film depositions to be carried ou t at temperatures at or below 125 degreesC, and making this fabrication pro cess a candidate for use on plastic or other thermally sensitive substrates . We discuss the performance of polymer molding as a patterning technique f or thin-film microstructures on both planar substrates and on substrates wi th three-dimensional curvature.