Thin films produced by plasma-enhanced chemical vapor deposition (PECVD) ha
ve potential application as conformal coatings on implantable devices with
complex topologies and small dimensions. Coatings on such devices need to b
e biocompatible, insulating, and flexible enough to minimize static forces
on the surrounding tissue. In this study, we describe the use of pulsed-PEC
VD to deposit thin films from hexamethylcyclotrisiloxane (D-3) Pulsed-PECVD
is a method in which plasma excitation is modulated to favor deposition fr
om neutral and radical species. Thin, conformal coatings were demonstrated
on nonplanar substrates suitable for implantation, such as copper wires and
neural probes. Coatings were resistant to prolonged immersion in warm sali
ne solution, and wire coatings produced by pulsed-PECVD showed more flexibi
lity than analogous coatings deposited by continuous-wave (CW) excitation.
Using Fourier transform infrared spectroscopy, it was demonstrated that the
mode of plasma excitation is important in determining film structure. Both
CW and pulsed-PECVD showed evidence of cross-linking via ternary and quate
rnary silicon atoms bonded to more than two oxygen atoms. Methylene groups
were observed only in CW films, and may constitute part of a carbon cross-l
inking unit of the form Si(CH2)(n)Si, where n greater than or equal to 1. M
ethylene was not detectable in the pulsed-PECVD films, suggesting that form
ation of carbon cross-links requires a longer plasma decomposition period.
The presence of two distinct cross-linking structures in CW films leads to
a highly networked structure and results in brittle coatings on thin wires.
A higher proportion of terminal methyl groups was also observed in CW film
s, suggesting that pulsed-PECVD films may retain more precursor ring struct
ure than CW films.