Au/Ti/p-diamond ohmic contacts prepared by radio-frequency sputtering

The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohm ic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resist ivities of 2.886 x 10(-3) and 2.040 x 10(-4) Omega .cm(2) are obtained, res pectively The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO2 is observed.