Selective deposition of thin copper films onto silicon with improved adhesion

A novel copper deposition method has been developed to plate silicon surfac es. Continuous copper films are obtained galvanically on p- or n-type, sing le- or polycrystalline silicon. The films possess homogeneous structure, sm ooth surface, and improved adhesion to the substrate. The plating bath comp rises an aqueous solution containing a copper compound, ascorbic acid, ammo nium fluoride, and an antistress agent. With this process, the use of seed layers to improve adhesion between metal and semiconductor is avoided. (C) 2000 The Electrochemical Society. S1099-0062(00)07-069-3. All rights reserv ed.