6.8GHz monolithic oscillator fabricated by 0.35 mu m CMOS technologies

Authors
Hsiao, CC Kuo, CW Chan, YJ
Citation
Cc. Hsiao et al., 6.8GHz monolithic oscillator fabricated by 0.35 mu m CMOS technologies, ELECTR LETT, 36(23), 2000, pp. 1927-1928
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
23
Year of publication
2000
Pages
1927 - 1928
Database
ISI
SICI code
0013-5194(20001109)36:23<1927:6MOFB0>2.0.ZU;2-T
Abstract
A 6.8GHz CMOS monolithic oscillator with a 5.9dBm output power has been dem onstrated by 0.35 mum 1P4M CMOS technologies. The oscillator was designed b ased on a home-made modified BSIM3v3 large-signal model, where the high-fre quency parasitics were included. In addition, on chip spiral inductors and MIM capacitors for the resonant circuit were characterised and used in this monolithic oscillator circuit.