Temperature dependency of x-cut LiNbO3 modulator DC drift

Authors
Nagata, H Ishizuka, Y Akizuki, K
Citation
H. Nagata et al., Temperature dependency of x-cut LiNbO3 modulator DC drift, ELECTR LETT, 36(23), 2000, pp. 1952-1953
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
23
Year of publication
2000
Pages
1952 - 1953
Database
ISI
SICI code
0013-5194(20001109)36:23<1952:TDOXLM>2.0.ZU;2-A
Abstract
The activation energy (E (a)) for DC drifts chi -cut LiNbO3 (LN) modulators was obtained to be 1.4 +/- 0.2eV based on statistical consideration of lon g-term biased aging test data at 100 and 120 degreesC. E (a) = 1.4eV means that 20 years of device life at 65 degreesC - common system requirements - can be promptly tested by 9 days' aging at 120 degreesC.