Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode

Authors
Qasaimeh, O Zhou, WD Bhattacharya, P Huffaker, D Deppe, DG
Citation
O. Qasaimeh et al., Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode, ELECTR LETT, 36(23), 2000, pp. 1955-1957
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
23
Year of publication
2000
Pages
1955 - 1957
Database
ISI
SICI code
0013-5194(20001109)36:23<1955:MILPII>2.0.ZU;2-4
Abstract
A low-power monolithically integrated phototransceiver, consisting of a hig h-sensitivity modulated barrier photodiode and a In0,4Ga0,6As/GaAs self-org anised quantum-dot microavity light-emitting diode, is demonstrated. The mo dulated barrier photodiode exhibits a responsivity of 1.8 x 10(3) A/W, for 630nm excitation, at an input power of 10nW. The output wavelength is 980nm . The phototransceiver exhibits an optical gain of 18dB and power dissipati on of 110 muW for an input power of 10nW.