High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer

Gallium nitride pin rectifiers have been fabricated and characterised. The device structures were grown by metalorganic chemical Vapour deposition on c-plane sapphire substrates. The pin diode epitaxial structure consisted of an n(+)-GaN layer, followed by a 2 mum i-GaN layer and a p-type GaN layer on top. The mesa-structure pin diodes exhibited a blocking voltage as large as V-r similar or equal to -410V at a reverse current density of I-r simil ar or equal to 10 A/cm(2) and a forward voltage drop of only 8V at a forwar d current density of similar to 100 A/cm(2). These Values indicate that GaN -based pin rectifiers can be useful in high-voltage circuits.