Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation

Authors
Neogi, A Yoshida, H Mozume, T Georgiev, N Akiyama, T Wada, O
Citation
A. Neogi et al., Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation, ELECTR LETT, 36(23), 2000, pp. 1972-1974
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
23
Year of publication
2000
Pages
1972 - 1974
Database
ISI
SICI code
0013-5194(20001109)36:23<1972:ITIICD>2.0.ZU;2-H
Abstract
InP based InGaAs/AlAs/AlAsSb coupled double quantum well (CDQW) structures have been developed for intersubband transition (ISBT) in the near-infrared region for operation at communication wavelength. ISBT in CDQWs is influen ced by the well and barrier width, and by the carrier population in the gro und subband state governed by the doping level or the carrier temperature. ISBT at 1.3 and 1.55 mum can be achieved in 1.0nm AlAs barrier coupled InGa As/AlAsSb DQW with well widths 2.1nm doped to 10(18)cm(-3), and 2.7nm doped to 10(18)cm(-3), respectively.