THE REACTION BETWEEN A TINI SHAPE-MEMORY THIN-FILM AND SILICON

Authors
STEMMER S DUSCHER G SCHEU C HEUER AH RUHLE M
Citation
S. Stemmer et al., THE REACTION BETWEEN A TINI SHAPE-MEMORY THIN-FILM AND SILICON, Journal of materials research, 12(7), 1997, pp. 1734-1740
Citations number
18
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
12
Issue
7
Year of publication
1997
Pages
1734 - 1740
Database
ISI
SICI code
0884-2914(1997)12:7<1734:TRBATS>2.0.ZU;2-V
Abstract
The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transm ission electron microscopy. A reaction layer is formed during the 525 degrees C post-deposition crystallization anneal of the sputter-deposi ted TiNi, and consists of several phases: Ti2Ni, a nickel silicide, an d a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.