The impact of LOC structures on 670-nm (A1)GaInP high-power lasers

Authors
Lichtenstein, N Winterhoff, R Scholz, F Schweizer, H Weiss, S Hutter, M Reichl, H
Citation
N. Lichtenstein et al., The impact of LOC structures on 670-nm (A1)GaInP high-power lasers, IEEE S T QU, 6(4), 2000, pp. 564-570
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077260X → ACNP
Volume
6
Issue
4
Year of publication
2000
Pages
564 - 570
Database
ISI
SICI code
1077-260X(200007/08)6:4<564:TIOLSO>2.0.ZU;2-Q
Abstract
We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers, For that we study large series of broad are a lasers with varying waveguide widths to obtain statistically relevant dat a. We study in detail I-th, alpha (i), eta (i), and P-max, and analyze abov e-threshold behavior including temperature stability and leakage current. W e got as expected for LOC structures minimal alpha (i) less than or equal t o 1 cm(-1) resulting in eta (d) = 1.1 W/A for 64 X 2000 mum(2) uncoated dev ices. We obtain total output powers greater than or equal to3.2 W (qCW) and greater than or equal to1.5 W (CW) at 20 degreesC.