Photoluminescence of ZnSe crystals doped with Group V elements

Authors
Makhnii, VP Malimon, IV Chaban, YY
Citation
Vp. Makhnii et al., Photoluminescence of ZnSe crystals doped with Group V elements, INORG MATER, 36(11), 2000, pp. 1092-1093
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
1092 - 1093
Database
ISI
SICI code
0020-1685(200011)36:11<1092:POZCDW>2.0.ZU;2-M
Abstract
The luminescent properties of ZnSe crystals doped with Group V elements fro m the vapor phase were studied. Doping was found to result in an n- to p-ty pe conversion and buildup of edge emission. The near-edge photoluminescence spectra of the crystals studied comprise two bands due to electron-hole re combination through acceptor levels related to dopant atoms and selenium in terstitials.