Mechanism of p-CdTe aging

Authors
Rizakhanov, MA Emirov, YN
Citation
Ma. Rizakhanov et Yn. Emirov, Mechanism of p-CdTe aging, INORG MATER, 36(11), 2000, pp. 1101-1103
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
36
Issue
11
Year of publication
2000
Pages
1101 - 1103
Database
ISI
SICI code
0020-1685(200011)36:11<1101:MOPA>2.0.ZU;2-T
Abstract
We propose a mechanism of semiconductor aging accompanied by isothermal cha nges in the electrical conductivity of the material. The mechanism is based on the notion that aging is due to changes in the dimensions of electroact ive defect associates. Experimental data for p-CdTe lend support to the pro posed mechanism of aging.