Dl. Schlagel et al., Chemical segregation during bulk single crystal preparation of Ni-Mn-Ga ferromagnetic shape memory alloys, J ALLOY COM, 312(1-2), 2000, pp. 77-85
Preparation of bulk single crystals of the ferromagnetic shape memory alloy
Ni2MnGa has been accomplished using the Bridgman method. Magnetic and magn
etostrictive properties from samples sectioned from different portions of t
he crystal showed high variability, indicating significant chemical segrega
tion occurred during single crystal growth. This chemical segregation durin
g crystal growth implies that the compound Ni2MnGa does not melt congruentl
y. Partial evaluation of the liquidus diagram of Ni-Mn-Ga by thermal analys
is and microstructural evaluation has determined that the primary solidific
ation surface for the Heusler alloy phase exists over a wide range of compo
sitions. The primary solidification surface falls modestly in temperature w
ith either increasing Mn or Ga concentration. The composition Ni50Mn25Ga25
melts incongruently over a temperature range of approximately 18 degreesC.
Characterization of the compositional variation along the growth direction
in the single crystals was done using energy dispersive spectrometry and th
e results normalized against the fraction solidified. Compositional changes
during solidification followed constant electron/atom (e/a) ratios over mo
st of the length of the ingot. Under the single crystal growth conditions,
the segregation pattern corresponds to a fully mixed condition and the data
was fitted to a complete mixing model. Partitioning coefficients for the e
lemental constituents and the overall compositions were determined. The par
titioning coefficients were found to be uniformly consistent between differ
ent growth runs, even though the overall compositions differed between crys
tals. The martensite transition temperatures along the length of the crysta
l were measured by differential scanning calorimetry and compared to predic
ted transition temperatures based on the e/a concentration. (C) 2000 Elsevi
er Science B.V. All rights reserved.