Conductance switching and electrical breakdown of Yb2O3 films in silicon-substrate MIS structures: A comparative study by scanning-probe microscopy

Experimental results that verify the formation of a conducting microchannel ill Yb2O3 films under the transition to the low-resistivity state are repo rted. The films are part of MIS structures fabricated on silicon substrates . The conductance switching is compared with the electrical breakdown of th e films in terms of film relief and microchannel shape. It is found that th e microchannel has a finite lifetime, similar to2-5 min, due to the oxidati on of the material.