Citation
I. Nicoara et al., Growth and characterization of shaped GaSb crystals, J CRYST GR, 220(1-2), 2000, pp. 1-5
Citations number
33
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
220
Issue
1-2
Year of publication
2000
Pages
1 - 5
Database
ISI
SICI code
0022-0248(200011)220:1-2<1:GACOSG>2.0.ZU;2-M
Abstract
Shaped GaSb crystals (ribbons and rods) were grown by pulling from the melt
using a non-wetted floating shaper to control the crystal cross-section sh
ape and size. Graphite, which does not react chemically with molten gallium
antimonide, has been chosen as shaper and crucible material. Etch pit dens
ity and electrical properties of the ribbons were determined. (C) 2000 Else
vier Science B.V. All rights reserved.