Xd. Wang et al., 1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition, J CRYST GR, 220(1-2), 2000, pp. 16-22
1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at
room temperature has been achieved in In0.5Ga0.5As islands structure grown
on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic f
orce microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As
islands show quite uniform InGaAs mounds morphology along the [ 1(1) over
bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction
. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width,
the In0.5Ga0.5As islands structure always shows a lower PL peak energy and
narrower full-width at half-maximum (FWHM), also a stronger PL intensity a
t low excitation power and more efficient confinement of the carriers. Our
results provide important information for optimizing the epitaxial structur
es of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.
V. All rights reserved.